Skybridge-3D-CMOS: A Fine-Grained 3D CMOS Integrated Circuit Technology

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS

As CMOS scaling options are exhausted by fundamental limitations, device and circuit integration in the third-dimension could provide a possible pathway without extensively relying on ultra-scaled transistors. So far, however, the migration of CMOS to 3-D has been unattainable. The CMOS fabric architecture uses complementary MOSFETs in an inverted logic, where both pull-up and pull-down transis...

متن کامل

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (C...

متن کامل

Designing with 3d Soi Cmos

This paper presents a new three-dimensional CMOS-SOI technology and discusses design issues for it. In this technology the P-channel devices are stacked over the N-channel ones. All gates are 0.1μm length. New design constraints are introduced. Consequently, new design methodologies have to be developed in order to fully take advantage of the outstanding features of 3D integration like for exam...

متن کامل

3D-Solenoid MEMS RF Inductor Design in Standard CMOS Technology

A new 3-D solenoid-inductor structure that is compatible with standard CMOS technology is proposed. Simulation shows excellent area efficiency of more than 80% saving over conventional planar spiral inductor. If combined with post-micromaching, a peak quality factor greater than 10 at 30GHz can be realized.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Nanotechnology

سال: 2017

ISSN: 1536-125X,1941-0085

DOI: 10.1109/tnano.2017.2700626